Prof. Dr. Maria Chekhova

Flat-optics platforms offer new opportunities for the generation of entangled photons by relaxing traditional phase-matching constraints, enabling the use of a broader range of nonlinear materials. Among these, gallium arsenide and aluminum gallium arsenide stand out for their exceptionally high second-order nonlinearities, but their conventional orientation (001) has limited their applicability for photon-pair generation. By transitioning to crystals with (111) surface orientation, we overcome these limitations. We demonstrate a flat-optics-based telecom-range SPDC source using Al0.30Ga0.70As that achieves a high photon-pair generation rate per pump power and bandwidth of up to 0.24 Hz/mW/nm. The choice of 30% aluminum concentration allowed us to reduce pump absorption and photoluminescence background for photon-pair generation at telecom wavelengths by at least an order of magnitude compared to that of GaAs. The specific layer orientation facilitates the generation of orthogonally polarized entangled photons, a prerequisite for polarization-entangled states. Rather than directly probing entanglement, we observe the effect of hidden polarization. Our results highlight AlGaAs (111) as a promising platform for scalable quantum photonic sources and shed light on nonclassical polarization effects accessible through flat-optics engineering.