Head of the Chair of Electron Devices (LEB) and Director of the Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Prof. Dr.-Ing. habil. Jörg Schulze

Friedrich Alexander University Erlangen-Nürnberg

Faculty of Engineering, Department Electrical Engineering

The research group deals with the development, fabrication, characterization, and simulation of semiconductor devices. For the fabrication of the devices, a comprehensive process technology is available in the clean room laboratory, which is operated jointly by LEB and IISB.

Within the IMPRS-PL we research the development and fabrication of semiconductor-based photonic devices together with our partners. The wavelengths addressed range from short wavelength light in the VUV range (vacuum UV) to short wavelength infrared (SWIR). For the detection of short-wave UV radiation, photodiodes on silicon carbide (SiC) are being developed. For the fabrication of optical light emitters and detectors in the infrared range, germanium-based material systems are used. Single electron avalanche diodes (SPAD) on germanium-on-silicon substrates are being developed as well as silicon-germanium-tin (SiGeSn) based light emitters, especially laser structures. Finally, research is being conducted on the fabrication and characterization of color centers in SiC.

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